基于p-n异型异质结半导体二氧化氮气敏层的制备方法
- Patent Applicant:张超
- Patent description:基于p-n异型异质结半导体二氧化氮气敏层的制备方法
- Type of Patent:发明
- State of Patent:#N/A
- Application Number:201610930445.9
- Number of Inventors:5
- Service Invention or Not:no
- Application Date:2016-10-27
- First Author:Chao ZHANG
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基于同型异质结半导体二氧化氮气敏层的制备方法
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一种气缸套内壁再制造涂层的制备方法

