一种氧缺陷半导体二氧化氮气敏涂层的制备方法
- Patent Applicant:张超
- Patent description:一种氧缺陷半导体二氧化氮气敏涂层的制备方法
- Type of Patent:发明
- State of Patent:#N/A
- Application Number:201610076223.5
- Number of Inventors:6
- Service Invention or Not:no
- Application Date:2016-02-03
- First Author:Chao ZHANG
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一种室温氢气传感器的制备方法
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