一种少层V2AlC MAX相材料及其制备方法和应用
- Affilication of Author(s):扬州大学
- School Sign:扬州大学
- Disigner of the Invention:石国军
- Patent description:一种少层V2AlC MAX相材料及其制备方法和应用
- Type of Patent:发明
- Application Number:202510155179.6
- Number of Inventors:2
- Service Invention or Not:no
- Application Date:2025-02-12
- First Author:Guojun Shi
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一种改性LaMnO3钙钛矿氧化物催化剂及其制备方法和应用

